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  • IRF1324PBF

IRF1324PBF

IRF1324PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF1324PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 780
  • Description: IRF1324PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5m Ω @ 195A, 10V
Factory Lead Time 12 Weeks
Vgs(th) (Max) @ Id 4V @ 250μA
Mount Through Hole
Input Capacitance (Ciss) (Max) @ Vds 7590pF @ 24V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Mounting Type Through Hole
Package / Case TO-220-3
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Rise Time 190ns
Number of Pins 3
Drive Voltage (Max Rds On,Min Rds On) 10V
Transistor Element Material SILICON
Vgs (Max) ±20V
Operating Temperature -55°C~175°C TJ
Fall Time (Typ) 120 ns
Packaging Tube
Turn-Off Delay Time 83 ns
Continuous Drain Current (ID) 340A
Published 2008
Threshold Voltage 4V
Series HEXFET®
JEDEC-95 Code TO-220AB
Part Status Active
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 24V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Dual Supply Voltage 24V
Number of Terminations 3
Avalanche Energy Rating (Eas) 270 mJ
Nominal Vgs 4 V
Height 9.02mm
Termination Through Hole
Length 10.668mm
Width 4.826mm
Radiation Hardening No
ECCN Code EAR99
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Subcategory FET General Purpose Power
Lead Free Lead Free
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Turn On Delay Time 17 ns
FET Type N-Channel
See Relate Datesheet