Products
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prices and inventories about the part.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The
basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and
country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.Parameters | |
---|---|
Fall Time (Typ) | 110 ns |
Mounting Type | Through Hole |
Turn-Off Delay Time | 130 ns |
Package / Case | TO-220-3 |
Continuous Drain Current (ID) | 169A |
Threshold Voltage | 4V |
Number of Pins | 3 |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Transistor Element Material | SILICON |
Drain Current-Max (Abs) (ID) | 75A |
Drain to Source Breakdown Voltage | 55V |
Operating Temperature | -55°C~175°C TJ |
Pulsed Drain Current-Max (IDM) | 680A |
Dual Supply Voltage | 55V |
Packaging | Tube |
Avalanche Energy Rating (Eas) | 560 mJ |
Recovery Time | 130 ns |
Published | 2004 |
Series | HEXFET® |
Max Junction Temperature (Tj) | 175°C |
Part Status | Active |
Nominal Vgs | 4 V |
Height | 19.8mm |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Length | 10.668mm |
Width | 4.826mm |
Number of Terminations | 3 |
Radiation Hardening | No |
REACH SVHC | No SVHC |
Termination | Through Hole |
RoHS Status | ROHS3 Compliant |
ECCN Code | EAR99 |
Lead Free | Lead Free |
Resistance | 5.3mOhm |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 55V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 169A |
Lead Pitch | 2.54mm |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 330W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 330W |
Case Connection | DRAIN |
Turn On Delay Time | 13 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 5.3m Ω @ 101A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 5480pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 169A Tc |
Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V |
Factory Lead Time | 12 Weeks |
Rise Time | 190ns |
Mount | Through Hole |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
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