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  • IRF1503PBF

IRF1503PBF

MOSFET N-CH 30V 75A TO-220AB


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF1503PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 899
  • Description: MOSFET N-CH 30V 75A TO-220AB (Kg)

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Details

Tags

Parameters
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.3m Ω @ 140A, 10V
Factory Lead Time 12 Weeks
Vgs(th) (Max) @ Id 4V @ 250μA
Mount Through Hole
Input Capacitance (Ciss) (Max) @ Vds 5730pF @ 25V
Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 75A Tc
Package / Case TO-220-3
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Rise Time 130ns
Number of Pins 3
Drive Voltage (Max Rds On,Min Rds On) 10V
Transistor Element Material SILICON
Vgs (Max) ±20V
Operating Temperature -55°C~175°C TJ
Fall Time (Typ) 48 ns
Packaging Tube
Turn-Off Delay Time 59 ns
Published 2002
Continuous Drain Current (ID) 75A
Series HEXFET®
Part Status Obsolete
Threshold Voltage 4V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
JEDEC-95 Code TO-220AB
Number of Terminations 3
Gate to Source Voltage (Vgs) 20V
ECCN Code EAR99
Drain to Source Breakdown Voltage 30V
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Pulsed Drain Current-Max (IDM) 960A
Avalanche Energy Rating (Eas) 980 mJ
Voltage - Rated DC 30V
Nominal Vgs 4 V
Technology MOSFET (Metal Oxide)
Height 16.51mm
Current Rating 75A
Length 10.668mm
Number of Elements 1
Width 4.826mm
Power Dissipation-Max 330W Tc
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Element Configuration Single
Lead Free Lead Free
Operating Mode ENHANCEMENT MODE
Power Dissipation 330W
Case Connection DRAIN
Turn On Delay Time 17 ns
See Relate Datesheet