All Products

IRF2807STRRPBF

MOSFET N-CH 75V 82A D2PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF2807STRRPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 873
  • Description: MOSFET N-CH 75V 82A D2PAK (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 230W Tc
Operating Mode ENHANCEMENT MODE
Factory Lead Time 39 Weeks
Mounting Type Surface Mount
Case Connection DRAIN
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
FET Type N-Channel
Transistor Element Material SILICON
Transistor Application SWITCHING
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2002
Rds On (Max) @ Id, Vgs 13m Ω @ 43A, 10V
Series HEXFET®
JESD-609 Code e3
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3820pF @ 25V
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C 82A Tc
Number of Terminations 2
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Drain to Source Voltage (Vdss) 75V
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Drive Voltage (Max Rds On,Min Rds On) 10V
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Terminal Position SINGLE
Drain Current-Max (Abs) (ID) 75A
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Drain-source On Resistance-Max 0.013Ohm
Pulsed Drain Current-Max (IDM) 280A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
DS Breakdown Voltage-Min 75V
Qualification Status Not Qualified
Avalanche Energy Rating (Eas) 340 mJ
Number of Elements 1
RoHS Status ROHS3 Compliant
See Relate Datesheet