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  • IRF3205STRLPBF

IRF3205STRLPBF

IRF3205STRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF3205STRLPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 977
  • Description: IRF3205STRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
JESD-609 Code e3
Drain Current-Max (Abs) (ID) 75A
Drain to Source Breakdown Voltage 55V
Part Status Active
Dual Supply Voltage 55V
Avalanche Energy Rating (Eas) 264 mJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Recovery Time 104 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs 4 V
Number of Terminations 2
Height 5.084mm
Length 10.668mm
Width 10.54mm
Termination SMD/SMT
Radiation Hardening No
REACH SVHC No SVHC
ECCN Code EAR99
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
Resistance 8MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 110A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 200W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200W
Case Connection DRAIN
Turn On Delay Time 14 ns
Factory Lead Time 12 Weeks
FET Type N-Channel
Mount Surface Mount
Transistor Application SWITCHING
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 8m Ω @ 62A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds 3247pF @ 25V
Number of Pins 3
Current - Continuous Drain (Id) @ 25°C 110A Tc
Gate Charge (Qg) (Max) @ Vgs 146nC @ 10V
Transistor Element Material SILICON
Rise Time 101ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Operating Temperature -55°C~175°C TJ
Fall Time (Typ) 65 ns
Turn-Off Delay Time 50 ns
Packaging Tape & Reel (TR)
Continuous Drain Current (ID) 110A
Published 2001
Threshold Voltage 4V
Series HEXFET®
JEDEC-95 Code TO-252
Gate to Source Voltage (Vgs) 20V
See Relate Datesheet