Products
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RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The
basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and
country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.Parameters | |
---|---|
JEDEC-95 Code | TO-252 |
Drain Current-Max (Abs) (ID) | 75A |
Factory Lead Time | 14 Weeks |
Mounting Type | Surface Mount |
Drain-source On Resistance-Max | 0.008Ohm |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Pulsed Drain Current-Max (IDM) | 390A |
Surface Mount | YES |
DS Breakdown Voltage-Min | 55V |
Transistor Element Material | SILICON |
Avalanche Energy Rating (Eas) | 264 mJ |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
RoHS Status | ROHS3 Compliant |
Published | 2001 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 200W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 8m Ω @ 62A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 3247pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 110A Tc |
Gate Charge (Qg) (Max) @ Vgs | 146nC @ 10V |
Drain to Source Voltage (Vdss) | 55V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
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