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  • IRF3205ZSTRRPBF

IRF3205ZSTRRPBF

MOSFET N-CH 55V 75A D2PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF3205ZSTRRPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 459
  • Description: MOSFET N-CH 55V 75A D2PAK (Kg)

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Shipping Cost

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Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 6.5MOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Current Rating 75A
Number of Elements 1
Power Dissipation-Max 170W Tc
Power Dissipation 170W
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.5mOhm @ 66A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 95ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 67 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 75A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Input Capacitance 3.45nF
Drain to Source Resistance 6.5mOhm
Rds On Max 6.5 mΩ
Height 4.826mm
Length 10.668mm
Width 9.65mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet