English

All Products

View All >>
  • IRF3315SPBF

IRF3315SPBF

MOSFET N-CH 150V 21A D2PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF3315SPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: -
  • Stock: 124
  • Description: MOSFET N-CH 150V 21A D2PAK (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Operating Mode ENHANCEMENT MODE
Power Dissipation 84W
Case Connection DRAIN
Turn On Delay Time 9.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 82m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Rise Time 32ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Mount Surface Mount
Fall Time (Typ) 38 ns
Mounting Type Surface Mount
Turn-Off Delay Time 49 ns
Continuous Drain Current (ID) 21A
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Number of Pins 3
Drain-source On Resistance-Max 0.082Ohm
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 84A
Dual Supply Voltage 150V
Nominal Vgs 4 V
Transistor Element Material SILICON
Height 4.83mm
Length 10.67mm
Operating Temperature -55°C~175°C TJ
Width 9.65mm
Packaging Tube
Radiation Hardening No
Published 1997
REACH SVHC No SVHC
Series HEXFET®
RoHS Status ROHS3 Compliant
Lead Free Lead Free
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 150V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 21A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.8W Ta 94W Tc
Element Configuration Single
See Relate Datesheet