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  • IRF3708PBF

IRF3708PBF

MOSFET N-CH 30V 62A TO-220AB


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF3708PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 507
  • Description: MOSFET N-CH 30V 62A TO-220AB (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2000
Series HEXFET®
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 12MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 62A
Number of Elements 1
Power Dissipation-Max 87W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 87W
Case Connection DRAIN
Turn On Delay Time 7.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2417pF @ 15V
Current - Continuous Drain (Id) @ 25°C 62A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V
Rise Time 50ns
Drive Voltage (Max Rds On,Min Rds On) 2.8V 10V
Vgs (Max) ±12V
Fall Time (Typ) 3.7 ns
Turn-Off Delay Time 17.6 ns
Continuous Drain Current (ID) 62A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 248A
Dual Supply Voltage 30V
Recovery Time 65 ns
Nominal Vgs 2 V
Height 8.763mm
Length 10.5156mm
Width 4.69mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet