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  • IRF3709SPBF

IRF3709SPBF

MOSFET N-CH 30V 90A D2PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF3709SPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 788
  • Description: MOSFET N-CH 30V 90A D2PAK (Kg)

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Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
Series HEXFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 9MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 90A
Number of Elements 1
Power Dissipation-Max 3.1W Ta 120W Tc
Element Configuration Single
Power Dissipation 120W
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2672pF @ 16V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 41nC @ 5V
Rise Time 171ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9.2 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 90A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Input Capacitance 2.672nF
Drain to Source Resistance 10.5mOhm
Rds On Max 9 mΩ
Nominal Vgs 3 V
Height 4.826mm
Length 10.668mm
Width 9.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet