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  • IRF3808PBF

IRF3808PBF

IRF3808PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF3808PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 437
  • Description: IRF3808PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Pulsed Drain Current-Max (IDM) 550A
Factory Lead Time 12 Weeks
Mount Through Hole
Dual Supply Voltage 75V
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Nominal Vgs 4 V
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series HEXFET®
Height 16.51mm
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Length 10.668mm
Resistance 7Ohm
Width 4.826mm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Radiation Hardening No
Voltage - Rated DC 75V
Technology MOSFET (Metal Oxide)
REACH SVHC No SVHC
Current Rating 140A
Number of Elements 1
RoHS Status ROHS3 Compliant
Power Dissipation-Max 330W Tc
Lead Free Lead Free
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 330W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 82A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5310pF @ 25V
Current - Continuous Drain (Id) @ 25°C 140A Tc
Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
Rise Time 140ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 120 ns
Turn-Off Delay Time 68 ns
Continuous Drain Current (ID) 140A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 75A
Drain to Source Breakdown Voltage 75V
See Relate Datesheet