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  • IRF3808STRRPBF

IRF3808STRRPBF

MOSFET N-CH 75V 106A D2PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF3808STRRPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 592
  • Description: MOSFET N-CH 75V 106A D2PAK (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series HEXFET®
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 200W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 82A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5310pF @ 25V
Current - Continuous Drain (Id) @ 25°C 106A Tc
Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
Rise Time 140ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 120 ns
Turn-Off Delay Time 68 ns
Continuous Drain Current (ID) 106A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.007Ohm
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 550A
Height 4.826mm
Length 10.668mm
Width 9.65mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet