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  • IRF4905PBF

IRF4905PBF

IRF4905PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF4905PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 497
  • Description: IRF4905PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Power Dissipation-Max 200W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 74A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 99ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 96 ns
Turn-Off Delay Time 61 ns
Continuous Drain Current (ID) -74A
Threshold Voltage -4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 64A
Drain-source On Resistance-Max 0.02Ohm
Drain to Source Breakdown Voltage -55V
Pulsed Drain Current-Max (IDM) 260A
Dual Supply Voltage -55V
Recovery Time 130 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs -4 V
Height 19.8mm
Length 10.5156mm
Width 4.69mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1997
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory Other Transistors
Voltage - Rated DC -55V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 250
Current Rating -74A
Time@Peak Reflow Temperature-Max (s) 30
Lead Pitch 2.54mm
Number of Elements 1
Number of Channels 1
See Relate Datesheet