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  • IRF5305PBF

IRF5305PBF

IRF5305PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF5305PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 766
  • Description: IRF5305PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Power Dissipation-Max 110W Tc
Element Configuration Single
Power Dissipation 110W
Turn On Delay Time 14 ns
FET Type P-Channel
Factory Lead Time 12 Weeks
Rds On (Max) @ Id, Vgs 60mOhm @ 16A, 10V
Contact Plating Tin
Vgs(th) (Max) @ Id 4V @ 250μA
Mount Through Hole
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 31A Tc
Package / Case TO-220-3
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Number of Pins 3
Rise Time 66ns
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Operating Temperature -55°C~175°C TJ
Vgs (Max) ±20V
Packaging Tube
Fall Time (Typ) 63 ns
Turn-Off Delay Time 39 ns
Published 2000
Continuous Drain Current (ID) -31A
Threshold Voltage -4V
Series HEXFET®
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -55V
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Dual Supply Voltage -55V
Input Capacitance 1.2nF
Termination Through Hole
Recovery Time 110 ns
Max Junction Temperature (Tj) 175°C
Resistance 60mOhm
Drain to Source Resistance 60mOhm
Max Operating Temperature 175°C
Rds On Max 60 mΩ
Nominal Vgs -4 V
Height 19.3mm
Min Operating Temperature -55°C
Length 10.5156mm
Width 4.69mm
Radiation Hardening No
Voltage - Rated DC -55V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Technology MOSFET (Metal Oxide)
Lead Free Contains Lead, Lead Free
Current Rating -31A
Lead Pitch 2.54mm
Number of Elements 1
Number of Channels 1
See Relate Datesheet