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IRF540NPBF

IRF540NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF540NPBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 937
  • Description: IRF540NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 44m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1960pF @ 25V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
Rise Time 35ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) 33A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Through Hole
Gate to Source Voltage (Vgs) 20V
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Drain to Source Breakdown Voltage 100V
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Dual Supply Voltage 100V
Packaging Tube
Published 1997
Recovery Time 170 ns
Series HEXFET®
JESD-609 Code e3
Nominal Vgs 4 V
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Height 8.77mm
Number of Terminations 3
Termination Through Hole
Length 10.54mm
ECCN Code EAR99
Resistance 44MOhm
Width 4.69mm
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Radiation Hardening No
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
REACH SVHC No SVHC
Peak Reflow Temperature (Cel) 250
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Current Rating 27A
Time@Peak Reflow Temperature-Max (s) 30
Lead Pitch 2.54mm
Number of Elements 1
Power Dissipation-Max 130W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 130W
Case Connection DRAIN
See Relate Datesheet