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IRF5801TRPBF

IRF5801TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF5801TRPBF
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 333
  • Description: IRF5801TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 2.2Ohm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 600mA
Number of Elements 1
Power Dissipation-Max 2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 6.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.2 Ω @ 360mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 88pF @ 25V
Current - Continuous Drain (Id) @ 25°C 600mA Ta
Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 10V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 8.8 ns
Continuous Drain Current (ID) 600mA
Threshold Voltage 5.5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 4.8A
Dual Supply Voltage 200V
Avalanche Energy Rating (Eas) 9.9 mJ
Nominal Vgs 5.5 V
Height 990.6μm
Length 2.9972mm
Width 1.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet