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  • IRF5803D2TRPBF

IRF5803D2TRPBF

MOSFET P-CH 40V 3.4A 8-SOIC


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF5803D2TRPBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 570
  • Description: MOSFET P-CH 40V 3.4A 8-SOIC (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series FETKY™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Number of Elements 1
Configuration Single
Power Dissipation-Max 2W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 43 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 112m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1110pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.4A Ta
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Rise Time 550ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 88 ns
Continuous Drain Current (ID) 3.4A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -40V
Dual Supply Voltage 40V
FET Feature Schottky Diode (Isolated)
Nominal Vgs 3 V
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet