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  • IRF614PBF

IRF614PBF

MOSFET N-CH 250V 2.7A TO-220AB


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRF614PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 150
  • Description: MOSFET N-CH 250V 2.7A TO-220AB (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 36W Tc
Element Configuration Single
Power Dissipation 36W
Turn On Delay Time 7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.7A Tc
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Rise Time 7.6ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 2.7A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Input Capacitance 140pF
Drain to Source Resistance 2Ohm
Rds On Max 2 Ω
Nominal Vgs 4 V
Height 9.01mm
Length 10.41mm
Width 4.7mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet