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  • IRF624PBF

IRF624PBF

MOSFET N-CH 250V 4.4A TO-220AB


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRF624PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 882
  • Description: MOSFET N-CH 250V 4.4A TO-220AB (Kg)

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Details

Tags

Parameters
Rds On (Max) @ Id, Vgs 1.1Ohm @ 2.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.4A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 4.4A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 250V
Input Capacitance 260pF
Drain to Source Resistance 1.1Ohm
Rds On Max 1.1 Ω
Height 9.01mm
Length 10.41mm
Width 4.7mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1.1Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 250V
Technology MOSFET (Metal Oxide)
Current Rating 4.4A
Number of Channels 1
Power Dissipation-Max 50W Tc
Element Configuration Single
Power Dissipation 50W
Turn On Delay Time 7 ns
FET Type N-Channel
See Relate Datesheet