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  • IRF624SPBF

IRF624SPBF

MOSFET N-CH 250V 4.4A D2PAK


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRF624SPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 647
  • Description: MOSFET N-CH 250V 4.4A D2PAK (Kg)

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Details

Tags

Parameters
Power Dissipation-Max 3.1W Ta 50W Tc
Element Configuration Single
Power Dissipation 3.1W
Turn On Delay Time 7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.1Ohm @ 2.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.4A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 4.4A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 250V
Input Capacitance 260pF
Drain to Source Resistance 1.1Ohm
Rds On Max 1.1 Ω
Factory Lead Time 8 Weeks
Height 4.83mm
Length 10.41mm
Mount Surface Mount
Mounting Type Surface Mount
Width 9.65mm
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Radiation Hardening No
Number of Pins 3
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Supplier Device Package D2PAK
Lead Free Lead Free
Weight 1.437803g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1.1Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
See Relate Datesheet