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  • IRF630NSTRRPBF

IRF630NSTRRPBF

MOSFET N-CH 200V 9.3A D2PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF630NSTRRPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 536
  • Description: MOSFET N-CH 200V 9.3A D2PAK (Kg)

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Details

Tags

Parameters
Drain to Source Breakdown Voltage 200V
Avalanche Energy Rating (Eas) 94 mJ
Height 4.826mm
Length 10.668mm
Width 9.65mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET®
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 9.3A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 82W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 82W
Case Connection DRAIN
Turn On Delay Time 7.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 300m Ω @ 5.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 575pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.3A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 9.3A
Gate to Source Voltage (Vgs) 20V
See Relate Datesheet