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  • IRF644PBF

IRF644PBF

MOSFET N-CH 250V 14A TO-220AB


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRF644PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 928
  • Description: MOSFET N-CH 250V 14A TO-220AB (Kg)

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Details

Tags

Parameters
FET Type N-Channel
Rds On (Max) @ Id, Vgs 280mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Rise Time 24ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 49 ns
Turn-Off Delay Time 53 ns
Continuous Drain Current (ID) 14A
Threshold Voltage 4V
Factory Lead Time 8 Weeks
Gate to Source Voltage (Vgs) 20V
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Drain to Source Breakdown Voltage 250V
Package / Case TO-220-3
Input Capacitance 1.3nF
Number of Pins 3
Recovery Time 500 ns
Supplier Device Package TO-220AB
Weight 6.000006g
Drain to Source Resistance 280mOhm
Operating Temperature -55°C~150°C TJ
Rds On Max 280 mΩ
Packaging Tube
Nominal Vgs 4 V
Published 2008
Part Status Active
Height 9.01mm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Length 10.41mm
Width 4.7mm
Resistance 280mOhm
Radiation Hardening No
Max Operating Temperature 150°C
REACH SVHC Unknown
Min Operating Temperature -55°C
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Voltage - Rated DC 250V
Technology MOSFET (Metal Oxide)
Current Rating 14A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Power Dissipation 125W
Turn On Delay Time 11 ns
See Relate Datesheet