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  • IRF6613TR1PBF

IRF6613TR1PBF

IRF6613TR1PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF6613TR1PBF
  • Package: DirectFET™ Isometric MT
  • Datasheet: PDF
  • Stock: 878
  • Description: IRF6613TR1PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MT
Number of Pins 5
Supplier Device Package DIRECTFET™ MT
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 3.4MOhm
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Voltage - Rated DC 40V
Technology MOSFET (Metal Oxide)
Current Rating 23A
Number of Elements 1
Power Dissipation-Max 2.8W Ta 89W Tc
Power Dissipation 89W
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.4mOhm @ 23A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5950pF @ 15V
Current - Continuous Drain (Id) @ 25°C 23A Ta 150A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 4.5V
Rise Time 47ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.9 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 18A
Threshold Voltage 1.35V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Dual Supply Voltage 40V
Input Capacitance 5.95nF
Recovery Time 57 ns
Drain to Source Resistance 4.1mOhm
Rds On Max 3.4 mΩ
Nominal Vgs 1.35 V
Height 506μm
Length 6.35mm
Width 5.05mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet