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  • IRF6617TRPBF

IRF6617TRPBF

MOSFET N-CH 30V 14A DIRECTFET


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF6617TRPBF
  • Package: DirectFET™ Isometric ST
  • Datasheet: PDF
  • Stock: 760
  • Description: MOSFET N-CH 30V 14A DIRECTFET (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric ST
Number of Pins 5
Supplier Device Package DIRECTFET™ ST
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 14A
Power Dissipation-Max 2.1W Ta 42W Tc
Power Dissipation 42W
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.35V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 15V
Current - Continuous Drain (Id) @ 25°C 14A Ta 55A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 34ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.7 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 11A
Threshold Voltage 2.35V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 1.3nF
Drain to Source Resistance 6.2mOhm
Rds On Max 8.1 mΩ
Nominal Vgs 2.35 V
Height 620μm
Length 3.95mm
Width 3.95mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet