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  • IRF6620TRPBF

IRF6620TRPBF

MOSFET N-CH 20V 27A DIRECTFET


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF6620TRPBF
  • Package: DirectFET™ Isometric MX
  • Datasheet: PDF
  • Stock: 155
  • Description: MOSFET N-CH 20V 27A DIRECTFET (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MX
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET®
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Current Rating 27A
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 89W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 89W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.7m Ω @ 27A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4130pF @ 10V
Current - Continuous Drain (Id) @ 25°C 27A Ta 150A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 4.5V
Rise Time 80ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.6 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 22A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0027Ohm
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 220A
Avalanche Energy Rating (Eas) 39 mJ
Nominal Vgs 2.45 V
Height 506μm
Length 6.35mm
Width 5.05mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet