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  • IRF6621TRPBF

IRF6621TRPBF

MOSFET N-CH 30V 12A DIRECTFET


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF6621TRPBF
  • Package: DirectFET™ Isometric SQ
  • Datasheet: PDF
  • Stock: 939
  • Description: MOSFET N-CH 30V 12A DIRECTFET (Kg)

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Details

Tags

Parameters
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.1m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1460pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Ta 55A Tc
Gate Charge (Qg) (Max) @ Vgs 17.5nC @ 4.5V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.1 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 9.6A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0091Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 96A
Avalanche Energy Rating (Eas) 13 mJ
Nominal Vgs 1.8 V
Height 506μm
Length 4.826mm
Width 3.95mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric SQ
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET®
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Current Rating 12A
JESD-30 Code R-XBCC-N2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.2W Ta 42W Tc
See Relate Datesheet