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  • IRF6629TR1PBF

IRF6629TR1PBF

MOSFET N-CH 25V 29A DIRECTFET


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF6629TR1PBF
  • Package: DirectFET™ Isometric MX
  • Datasheet: PDF
  • Stock: 104
  • Description: MOSFET N-CH 25V 29A DIRECTFET (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MX
Number of Pins 5
Supplier Device Package DIRECTFET™ MX
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 2.1MOhm
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Voltage - Rated DC 25V
Technology MOSFET (Metal Oxide)
Current Rating 29A
Power Dissipation-Max 2.8W Ta 100W Tc
Power Dissipation 100W
Turn On Delay Time 20 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.1mOhm @ 29A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4260pF @ 13V
Current - Continuous Drain (Id) @ 25°C 29A Ta 180A Tc
Gate Charge (Qg) (Max) @ Vgs 51nC @ 4.5V
Rise Time 67ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7.4 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 23A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Dual Supply Voltage 25V
Input Capacitance 4.26nF
Drain to Source Resistance 2.7mOhm
Rds On Max 2.1 mΩ
Nominal Vgs 1.8 V
Height 506μm
Width 5.05mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet