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IRF6636TRPBF

MOSFET N-CH 20V 18A DIRECTFET


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF6636TRPBF
  • Package: DirectFET™ Isometric ST
  • Datasheet: PDF
  • Stock: 746
  • Description: MOSFET N-CH 20V 18A DIRECTFET (Kg)

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Details

Tags

Parameters
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Current Rating 18A
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.2W Ta 42W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2420pF @ 10V
Current - Continuous Drain (Id) @ 25°C 18A Ta 81A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V
Rise Time 19ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.2 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 15A
Threshold Voltage 2.45V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Avalanche Energy Rating (Eas) 28 mJ
Height 506μm
Length 4.826mm
Width 3.95mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric ST
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
See Relate Datesheet