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  • IRF6644TR1PBF

IRF6644TR1PBF

IRF6644TR1PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF6644TR1PBF
  • Package: DirectFET™ Isometric MN
  • Datasheet: PDF
  • Stock: 732
  • Description: IRF6644TR1PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Current Rating 10.3A
JESD-30 Code R-XBCC-N3
Number of Elements 1
Power Dissipation-Max 2.8W Ta 89W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13m Ω @ 10.3A, 10V
Vgs(th) (Max) @ Id 4.8V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 2210pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10.3A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Rise Time 26ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 8.3A
Threshold Voltage 2.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 228A
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 86 mJ
Recovery Time 63 ns
Nominal Vgs 2.8 V
Height 506μm
Length 6.35mm
Width 5.05mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Mount Surface Mount
Lead Free Lead Free
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MN
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
Resistance 13MOhm
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
See Relate Datesheet