English

All Products

View All >>
  • IRF6645TR1PBF

IRF6645TR1PBF

MOSFET N-CH 100V 5.7A DIRECTFET


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF6645TR1PBF
  • Package: DirectFET™ Isometric SJ
  • Datasheet: PDF
  • Stock: 175
  • Description: MOSFET N-CH 100V 5.7A DIRECTFET (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric SJ
Number of Pins 5
Supplier Device Package DIRECTFET™ SJ
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 35MOhm
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 5.7A
Number of Elements 1
Power Dissipation-Max 2.2W Ta 42W Tc
Element Configuration Single
Power Dissipation 42W
Turn On Delay Time 9.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 35mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 4.9V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.7A Ta 25A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 5ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.1 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 4.5A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Input Capacitance 890pF
Recovery Time 47 ns
Drain to Source Resistance 28mOhm
Rds On Max 35 mΩ
Nominal Vgs 3 V
Height 530μm
Length 4.826mm
Width 3.95mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet