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  • IRF6646TR1PBF

IRF6646TR1PBF

IRF6646TR1PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF6646TR1PBF
  • Package: DirectFET™ Isometric MN
  • Datasheet: PDF
  • Stock: 257
  • Description: IRF6646TR1PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MN
Number of Pins 5
Supplier Device Package DIRECTFET™ MN
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 9.5MOhm
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Voltage - Rated DC 80V
Technology MOSFET (Metal Oxide)
Current Rating 12A
Number of Elements 1
Power Dissipation-Max 2.8W Ta 89W Tc
Element Configuration Single
Power Dissipation 89W
Turn On Delay Time 17 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4.9V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 2060pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta 68A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 9.6A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 80V
Dual Supply Voltage 80V
Input Capacitance 2.06nF
Recovery Time 54 ns
Drain to Source Resistance 7.6mOhm
Rds On Max 9.5 mΩ
Nominal Vgs 3 V
Height 506μm
Length 6.35mm
Width 5.05mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet