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  • IRF6646TRPBF

IRF6646TRPBF

MOSFET N-CH 80V 12A DIRECTFET


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF6646TRPBF
  • Package: DirectFET™ Isometric MN
  • Datasheet: PDF
  • Stock: 978
  • Description: MOSFET N-CH 80V 12A DIRECTFET (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MN
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET®
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory FET General Purpose Power
Voltage - Rated DC 80V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Current Rating 12A
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 89W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 89W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.5m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4.9V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 2060pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta 68A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 12mA
Threshold Voltage 4.9V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 68A
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 96A
Avalanche Energy Rating (Eas) 230 mJ
Height 506μm
Length 6.35mm
Width 5.05mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet