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  • IRF6648TRPBF

IRF6648TRPBF

MOSFET N-CH 60V 86A DIRECTFET


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF6648TRPBF
  • Package: DirectFET™ Isometric MN
  • Datasheet: PDF
  • Stock: 939
  • Description: MOSFET N-CH 60V 86A DIRECTFET (Kg)

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Details

Tags

Parameters
Subcategory FET General Purpose Power
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Voltage - Rated DC 60V
Turn-Off Delay Time 28 ns
Technology MOSFET (Metal Oxide)
Continuous Drain Current (ID) 86mA
Threshold Voltage 4V
Terminal Position BOTTOM
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.007Ohm
Drain to Source Breakdown Voltage 60V
Current Rating 86A
Pulsed Drain Current-Max (IDM) 260A
Avalanche Energy Rating (Eas) 47 mJ
Height 508μm
JESD-30 Code R-XBCC-N3
Length 5.45mm
Width 5.05mm
Number of Elements 1
Radiation Hardening No
Factory Lead Time 12 Weeks
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Mount Surface Mount
Lead Free Lead Free
Configuration SINGLE WITH BUILT-IN DIODE
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MN
Power Dissipation-Max 2.8W Ta 89W Tc
Number of Pins 5
Operating Mode ENHANCEMENT MODE
Transistor Element Material SILICON
Power Dissipation 89W
Operating Temperature -40°C~150°C TJ
Case Connection DRAIN
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET®
Turn On Delay Time 16 ns
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type N-Channel
Transistor Application SWITCHING
Number of Terminations 3
Rds On (Max) @ Id, Vgs 7m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 4.9V @ 150μA
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Input Capacitance (Ciss) (Max) @ Vds 2120pF @ 25V
Current - Continuous Drain (Id) @ 25°C 86A Tc
Additional Feature LOW CONDUCTION LOSS
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 29ns
See Relate Datesheet