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  • IRF6715MTRPBF

IRF6715MTRPBF

MOSFET N-CH 25V 34A DIRECTFET


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF6715MTRPBF
  • Package: DirectFET™ Isometric MX
  • Datasheet: PDF
  • Stock: 124
  • Description: MOSFET N-CH 25V 34A DIRECTFET (Kg)

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Details

Tags

Parameters
Continuous Drain Current (ID) 34A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Avalanche Energy Rating (Eas) 200 mJ
Height 506μm
Length 6.35mm
Width 5.05mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MX
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET®
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 78W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6m Ω @ 34A, 10V
Vgs(th) (Max) @ Id 2.4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 5340pF @ 13V
Current - Continuous Drain (Id) @ 25°C 34A Ta 180A Tc
Gate Charge (Qg) (Max) @ Vgs 59nC @ 4.5V
Rise Time 31ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 16 ns
See Relate Datesheet