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  • IRF6722MTRPBF

IRF6722MTRPBF

MOSFET N-CH 30V 13A DIRECTFET


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF6722MTRPBF
  • Package: DirectFET™ Isometric MP
  • Datasheet: PDF
  • Stock: 328
  • Description: MOSFET N-CH 30V 13A DIRECTFET (Kg)

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Details

Tags

Parameters
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.3W Ta 42W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.7m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 2.4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13A Ta 56A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 7.8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.1 ns
Turn-Off Delay Time 9.5 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0077Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 82 mJ
Height 506μm
Length 6.35mm
Width 5.05mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MP
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series HEXFET®
See Relate Datesheet