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  • IRF6785MTRPBF

IRF6785MTRPBF

MOSFET N-CH 200V 3.4A DIRECTFET


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF6785MTRPBF
  • Package: DirectFET™ Isometric MZ
  • Datasheet: PDF
  • Stock: 306
  • Description: MOSFET N-CH 200V 3.4A DIRECTFET (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MZ
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series HEXFET®
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 57W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 57W
Case Connection DRAIN
Turn On Delay Time 6.2 ns
FET Type N-Channel
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 100m Ω @ 4.2A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.4A Ta 19A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Rise Time 8.6ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 7.2 ns
Continuous Drain Current (ID) 3.4A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 19A
Drain-source On Resistance-Max 0.1Ohm
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 27A
Avalanche Energy Rating (Eas) 33 mJ
Height 506μm
Length 6.35mm
Width 5.05mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet