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  • IRF6894MTRPBF

IRF6894MTRPBF

IRF6894MTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF6894MTRPBF
  • Package: DirectFET™ Isometric MX
  • Datasheet: PDF
  • Stock: 765
  • Description: IRF6894MTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MX
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.3MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.1W Ta 54W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 54W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.3m Ω @ 33A, 10V
Vgs(th) (Max) @ Id 2.1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4160pF @ 13V
Current - Continuous Drain (Id) @ 25°C 32A Ta 160A Tc
Gate Charge (Qg) (Max) @ Vgs 39nC @ 4.5V
Rise Time 42ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 33A
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 260A
FET Feature Schottky Diode (Body)
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet