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IRF7105TRPBF

IRF7105TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF7105TRPBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 544
  • Description: IRF7105TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 100mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 3.5A
Base Part Number IRF7105PBF
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 7 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 1A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 15V
Current - Continuous Drain (Id) @ 25°C 3.5A 2.3A
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 13ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 37 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 3.5A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 14A
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Standard
Nominal Vgs 3 V
Height 1.75mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet