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IRF7204TRPBF

MOSFET P-CH 20V 5.3A 8-SOIC


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF7204TRPBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 965
  • Description: MOSFET P-CH 20V 5.3A 8-SOIC (Kg)

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FedEx International, 5-7 business days.

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Details

Tags

Parameters
Turn-Off Delay Time 100 ns
Packaging Tape & Reel (TR)
Continuous Drain Current (ID) -5.3A
Published 1997
Threshold Voltage -2.5V
Series HEXFET®
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Dual Supply Voltage -20V
Recovery Time 100 ns
Number of Terminations 8
Nominal Vgs -2.5 V
Resistance 60mOhm
Height 1.4986mm
Additional Feature LOGIC LEVEL COMPATIBLE
Length 4.9784mm
Width 3.9878mm
Voltage - Rated DC -20V
Radiation Hardening No
Technology MOSFET (Metal Oxide)
REACH SVHC No SVHC
Terminal Position DUAL
RoHS Status ROHS3 Compliant
Terminal Form GULL WING
Lead Free Contains Lead, Lead Free
Current Rating -5.3A
Number of Elements 1
Power Dissipation-Max 2.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Output Current 5.3A
Turn On Delay Time 14 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 5.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5.3A Ta
Factory Lead Time 12 Weeks
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Mount Surface Mount
Rise Time 26ns
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Drain to Source Voltage (Vdss) 20V
Number of Pins 8
Transistor Element Material SILICON
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Operating Temperature -55°C~150°C TJ
Vgs (Max) ±12V
Fall Time (Typ) 68 ns
See Relate Datesheet