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  • IRF7240TRPBF

IRF7240TRPBF

MOSFET P-CH 40V 10.5A 8-SOIC


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF7240TRPBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 489
  • Description: MOSFET P-CH 40V 10.5A 8-SOIC (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 15mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Subcategory Other Transistors
Voltage - Rated DC -40V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -10.5A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 52 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10.5A Ta
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 490ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 97 ns
Turn-Off Delay Time 210 ns
Continuous Drain Current (ID) -10.5A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -40V
Pulsed Drain Current-Max (IDM) 43A
Recovery Time 65 ns
Max Junction Temperature (Tj) 150°C
Height 1.75mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet