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  • IRF7304TRPBF

IRF7304TRPBF

IRF7304TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF7304TRPBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 124
  • Description: IRF7304TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Resistance 90mOhm
Additional Feature LOGIC LEVEL COMPATIBLE
Power Rating 2W
Voltage - Rated DC -20V
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating -4.3A
Base Part Number IRF7304PBF
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 8.4 ns
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 90m Ω @ 2.2A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 610pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4.3A
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
Rise Time 26ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 33 ns
Turn-Off Delay Time 51 ns
Continuous Drain Current (ID) -4.3A
Threshold Voltage -700mV
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 3.6A
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Recovery Time 84 ns
FET Feature Logic Level Gate
Nominal Vgs -700 mV
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
See Relate Datesheet