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  • IRF730APBF

IRF730APBF

MOSFET N-CH 400V 5.5A TO-220AB


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRF730APBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 439
  • Description: MOSFET N-CH 400V 5.5A TO-220AB (Kg)

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Details

Tags

Parameters
Voltage - Rated DC 400V
Technology MOSFET (Metal Oxide)
Current Rating 5.5A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 74W Tc
Element Configuration Single
Power Dissipation 74W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.5A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 22ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 5.5A
Threshold Voltage 4.5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 400V
Input Capacitance 600pF
Recovery Time 550 ns
Drain to Source Resistance 1Ohm
Rds On Max 1 Ω
Nominal Vgs 4.5 V
Height 9.01mm
Length 10.41mm
Width 4.7mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
See Relate Datesheet