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  • IRF730BPBF

IRF730BPBF

MOSFET N-CH 400V 5.5A TO-220AB


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRF730BPBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 725
  • Description: MOSFET N-CH 400V 5.5A TO-220AB (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN OVER NICKEL
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 104W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 311pF @ 100V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 11ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 6A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 1Ohm
Pulsed Drain Current-Max (IDM) 13A
DS Breakdown Voltage-Min 400V
Avalanche Energy Rating (Eas) 104 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet