Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Technology | Operating Mode | Manufacturer Package Identifier | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Reference Standard | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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SQJ409EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.267mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G4 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 68W | 23 ns | 68W Tc | -60A | 175°C | 0.007Ohm | 75 ns | SILICON | P-Channel | 7m Ω @ 10A, 10V | 2.5V @ 250μA | 11000pF @ 25V | 260nC @ 10V | 20V | -40V | 60A Tc | 40V | 84 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
SI4378DY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | 2.7mOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 8 | 1 | FET General Purpose Powers | 1 | Single | 1.6W | 85 ns | 600mV | 1.6W Ta | 25A | SWITCHING | 140 ns | SILICON | N-Channel | 2.7m Ω @ 25A, 4.5V | 1.8V @ 250μA | 8500pF @ 10V | 55nC @ 4.5V | 65ns | 65 ns | 12V | 20V | 600 mV | 19A Ta | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||
SI4477DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.5mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 8 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 3W | 42 ns | -1.5V | 3W Ta 6.6W Tc | -26.6A | SWITCHING | 0.0062Ohm | 100 ns | SILICON | P-Channel | 6.2m Ω @ 18A, 4.5V | 1.5V @ 250μA | 4600pF @ 10V | 190nC @ 10V | 42ns | 42 ns | 12V | -20V | 26.6A Tc | 20V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||
IRF730BPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2013 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN OVER NICKEL | SINGLE | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 12 ns | 104W Tc | 6A | SWITCHING | 1Ohm | 400V | 14 ns | SILICON | N-Channel | 1 Ω @ 3A, 10V | 5V @ 250μA | 311pF @ 100V | 18nC @ 10V | 11ns | 8 ns | 30V | 6A | 6A Tc | 400V | 13A | 104 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
SIHP5N50D-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 3 | 10.51mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.65mm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Powers | 1 | TO-220AB | Single | 104W | 12 ns | 3V | 104W Tc | 5.3A | SWITCHING | 500V | 14 ns | SILICON | N-Channel | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 325pF @ 100V | 20nC @ 10V | 11ns | 11 ns | 30V | 5.3A Tc | 500V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
SQJA70EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G4 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 27W Tc | 0.208Ohm | 100V | SILICON | N-Channel | 95m Ω @ 4A, 10V | 3.5V @ 250μA | 220pF @ 25V | 7nC @ 10V | 14.7A | 14.7A Tc | 100V | 18A | 5 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
IRLL014TRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | Active | 1 (Unlimited) | 3 | EAR99 | 6.7mm | ROHS3 Compliant | Lead Free | No | 4 | LOGIC LEVEL COMPATIBLE | TO-261-4, TO-261AA | Unknown | 1.8mm | 3.7mm | 200mOhm | Surface Mount | 250.212891mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2A | DUAL | GULL WING | 260 | 40 | 4 | R-PDSO-G3 | 1 | 55V | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2W | 9.3 ns | 2V | 2W Ta 3.1W Tc | 2.7A | SWITCHING | 17 ns | SILICON | N-Channel | 200m Ω @ 1.6A, 5V | 2V @ 250μA | 400pF @ 25V | 8.4nC @ 5V | 110ns | 26 ns | 10V | 60V | 1 V | 2.7A Tc | 4V 5V | ±10V | |||||||||||||||||||||||||||||
SQD10N30-330H_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | unknown | 2.507mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | 107W | 10 ns | 107W Tc | 10A | 175°C | 20 ns | N-Channel | 330m Ω @ 14A, 10V | 4.4V @ 250μA | 2190pF @ 25V | 47nC @ 10V | 30V | 300V | 10A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1078X-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | TrenchFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | SOT-563, SOT-666 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 240mW Tc | N-Channel | 142m Ω @ 1A, 10V | 1.5V @ 250μA | 110pF @ 15V | 3nC @ 4.5V | 1.02A Tc | 30V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7145DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | Unknown | 1.17mm | 5.89mm | 2.6mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | S17-0173-Single | e3 | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | Other Transistors | 1 | DRAIN | Single | 6.25W | 27 ns | -2.3V | 6.25W Ta 104W Tc | -60A | 150°C | SWITCHING | 130 ns | SILICON | P-Channel | 2.6m Ω @ 25A, 10V | 2.3V @ 250μA | 15660pF @ 15V | 413nC @ 10V | 110ns | 43 ns | 20V | -30V | -2.3 V | 36.5A | 60A Tc | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||
SQJ464EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2016 | Active | 1 (Unlimited) | 4 | EAR99 | Non-RoHS Compliant | Lead Free | PowerPAK® SO-8 | unknown | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G4 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 45W Tc | 0.017Ohm | 60V | SILICON | N-Channel | 17m Ω @ 7.1A, 10V | 2.5V @ 250μA | 2086pF @ 30V | 44nC @ 10V | 32A | 32A Tc | 60V | 130A | 31 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IRLR014TRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.39mm | 6.22mm | 200mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 2.5W | 9.3 ns | 2.5W Ta 25W Tc | 7.7A | SWITCHING | 17 ns | SILICON | N-Channel | 200m Ω @ 4.6A, 5V | 2V @ 250μA | 400pF @ 25V | 8.4nC @ 5V | 110ns | 26 ns | 10V | 60V | 7.7A Tc | 27.4 mJ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||
SI4835DDY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.5mm | 4mm | 18MOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 40 | 8 | 1 | 1 | Single | 2.5W | 44 ns | -3V | 2.5W Ta 5.6W Tc | -13A | SWITCHING | 28 ns | SILICON | P-Channel | 18m Ω @ 10A, 10V | 3V @ 250μA | 1960pF @ 15V | 65nC @ 10V | 100ns | 15 ns | 25V | -30V | 13A Tc | 30V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||
SI4491EDY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | SINGLE WITH BUILT-IN DIODE | MS-012AA | 3.1W Ta 6.9W Tc | 17.3A | SWITCHING | 0.0065Ohm | 30V | SILICON | P-Channel | 6.5m Ω @ 13A, 10V | 2.8V @ 250μA | 4620pF @ 15V | 153nC @ 10V | 25V | 17.3A Ta | 30V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||
SI4894BDY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 8 | 1 | FET General Purpose Powers | 1 | Single | 1.4W | 13 ns | 3V | 1.4W Ta | 12A | 33 ns | SILICON | N-Channel | 11m Ω @ 12A, 10V | 3V @ 250μA | 1580pF @ 15V | 38nC @ 10V | 10ns | 10 ns | 20V | 30V | 8.9A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
SI9435BDY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 42mOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 30 | 8 | 1 | Other Transistors | 1 | Single | 1.3W | 14 ns | -3V | 1.3W Ta | -4.1A | 30V | 42 ns | SILICON | P-Channel | 42m Ω @ 5.7A, 10V | 3V @ 250μA | 24nC @ 10V | 14ns | 14 ns | 20V | 4.1A Ta | 30V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
SI8823EDB-T2-E1 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Tape & Reel (TR) | TrenchFET® Gen III | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 4-XFBGA | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 900mW Tc | P-Channel | 95m Ω @ 1A, 4.5V | 800mV @ 250μA | 580pF @ 10V | 10nC @ 4.5V | 2.7A Tc | 20V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI8424CDB-T1-E1 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Surface Mount | Cut Tape (CT) | 2014 | TrenchFET® | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 4 | 4-UFBGA, WLCSP | No SVHC | 20mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | BALL | 1 | FET General Purpose Power | 1 | Single | 2.7W | 30 ns | 800mV | 1.1W Ta 2.7W Tc | 10A | SWITCHING | 8V | 150 ns | SILICON | N-Channel | 20m Ω @ 2A, 4.5V | 800mV @ 250μA | 2340pF @ 4V | 40nC @ 4.5V | 40ns | 40 ns | 5V | 8V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||
SIS402DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | Unknown | 1.04mm | 3.05mm | 6mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 8 | S-XDSO-C5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.8W | 25 ns | 3V | 3.8W Ta 52W Tc | 35A | SWITCHING | 30V | 25 ns | SILICON | N-Channel | 6m Ω @ 19A, 10V | 2.2V @ 250μA | 1700pF @ 15V | 42nC @ 10V | 20ns | 15 ns | 20V | 35A Tc | 30V | 70A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
SQM47N10-24L_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | TrenchFET® | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | Surface Mount | 1.437803g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | 260 | 40 | 4 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 136W | 10 ns | 2V | 136W Tc | 47A | 0.024Ohm | 32 ns | SILICON | N-Channel | 24m Ω @ 40A, 10V | 2.5V @ 250μA | 3620pF @ 25V | 72nC @ 10V | 6ns | 6 ns | 20V | 2 V | 47A Tc | 100V | 92 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
SUD19N20-90-T4-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | TrenchFET® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.39mm | 6.22mm | Surface Mount | 1.437803g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 15 ns | 3W Ta 136W Tc | 19A | SWITCHING | 30 ns | SILICON | N-Channel | 90m Ω @ 5A, 10V | 4V @ 250μA | 1800pF @ 25V | 51nC @ 10V | 50ns | 60 ns | 20V | 200V | 19A Tc | 40A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
SIR802DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | TrenchFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | Unknown | 5mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 8 | R-PDSO-C5 | 1 | FET General Purpose Powers | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 4.6W | 19 ns | 600mV | 4.6W Ta 27.7W Tc | 30A | SWITCHING | 36 ns | SILICON | N-Channel | 5m Ω @ 10A, 10V | 1.5V @ 250μA | 1785pF @ 10V | 32nC @ 10V | 14ns | 13 ns | 12V | 20V | 30A Tc | 70A | 20 mJ | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||
IRFBC30ALPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 150°C | -55°C | 10.67mm | ROHS3 Compliant | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | Unknown | 9.65mm | 4.83mm | Through Hole | 2.387001g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | Single | 9.8 ns | 4.5V | 2.2Ohm | I2PAK | 74W Tc | 3.6A | 19 ns | N-Channel | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250μA | 510pF @ 25V | 23nC @ 10V | 13ns | 12 ns | 30V | 3.6A Tc | 600V | 510pF | 10V | ±30V | 2.2 Ω | |||||||||||||||||||||||||||||||||||||||||||
SIHP17N60D-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | TO-220-3 | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 3 | 1 | FET General Purpose Powers | 1 | TO-220AB | Single | 22 ns | 277.8W Tc | 17A | 600V | 37 ns | SILICON | N-Channel | 340m Ω @ 8A, 10V | 5V @ 250μA | 1780pF @ 100V | 90nC @ 10V | 56ns | 30 ns | 30V | 17A Tc | 600V | 48A | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
SQV120N06-4M7L_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | TO-262-3 Long Leads, I2Pak, TO-262AA | unknown | 14.86mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSIP-T3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 250W | 16 ns | 250W Tc | 120A | 175°C | 0.0047Ohm | 46 ns | SILICON | N-Channel | 4.7m Ω @ 30A, 10V | 2.5V @ 250μA | 8800pF @ 25V | 230nC @ 10V | 20V | 60V | 120A Tc | 300A | 320 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
SIE802DF-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 4 | EAR99 | 6.15mm | ROHS3 Compliant | Lead Free | No | 10 | 10-PolarPAK® (L) | 800μm | 5.16mm | 1.9mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | 10 | R-XDSO-N4 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 5.2W | 25 ns | 5.2W Ta 125W Tc | 60A | SWITCHING | 30V | 65 ns | SILICON | N-Channel | 1.9m Ω @ 23.6A, 10V | 2.7V @ 250μA | 7000pF @ 15V | 160nC @ 10V | 20ns | 10 ns | 20V | 42.7A | 60A Tc | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
SIHG24N65E-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Through Hole | Tube | 2012 | Active | 1 (Unlimited) | 150°C | -55°C | 15.87mm | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | Unknown | 20.7mm | 5.31mm | 145mOhm | Through Hole | 38.000013g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 250W | 24 ns | 2V | 145mOhm | TO-247AC | 250W Tc | 24A | 70 ns | N-Channel | 145mOhm @ 12A, 10V | 4V @ 250μA | 2740pF @ 100V | 122nC @ 10V | 84ns | 69 ns | 20V | 24A Tc | 650V | 2.74nF | 10V | ±30V | 145 mΩ | |||||||||||||||||||||||||||||||||||||||
SIHG14N50D-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2015 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | TO-247-3 | Through Hole | 38.000013g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | 1 | TO-247AC | DRAIN | Single | 16 ns | 208W Tc | 14A | SWITCHING | 0.4Ohm | 29 ns | SILICON | N-Channel | 400m Ω @ 7A, 10V | 5V @ 250μA | 1144pF @ 100V | 58nC @ 10V | 27ns | 26 ns | 30V | 500V | 14A Tc | 56 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
SIE818DF-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | No | 10 | 10-PolarPAK® (L) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | DUAL | 260 | 30 | 10 | R-XDSO-N4 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 5.2W | 30 ns | 5.2W Ta 125W Tc | 16A | SWITCHING | 0.0095Ohm | 40 ns | SILICON | N-Channel | 9.5m Ω @ 16A, 10V | 3V @ 250μA | 3200pF @ 38V | 95nC @ 10V | 150ns | 15 ns | 20V | 75V | 79A | 60A Tc | 80A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
SIHP22N60E-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 3 | 10.51mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED | TO-220-3 | Unknown | 15.49mm | 4.65mm | 180mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 3 | 1 | FET General Purpose Power | 1 | TO-220AB | Single | 227W | 18 ns | 2V | 227W Tc | 21A | SWITCHING | 600V | 59 ns | SILICON | N-Channel | 180m Ω @ 11A, 10V | 4V @ 250μA | 1920pF @ 100V | 86nC @ 10V | 68ns | 54 ns | 20V | 21A Tc | 600V | 56A | 10V | ±30V |
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