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  • IRF7342TRPBF

IRF7342TRPBF

MOSFET 2P-CH 55V 3.4A 8-SOIC


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF7342TRPBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 845
  • Description: MOSFET 2P-CH 55V 3.4A 8-SOIC (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1999
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 105mOhm
Additional Feature ULTRA LOW RESISTANCE
Voltage - Rated DC -55V
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating -3.4A
Base Part Number IRF7342PBF
Number of Elements 2
Row Spacing 6.3 mm
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 14 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 105m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 690pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.4A
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 55V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) -3.4A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -55V
Avalanche Energy Rating (Eas) 114 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Recovery Time 80 ns
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs -1 V
Height 1.75mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
See Relate Datesheet