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  • IRF7410GTRPBF

IRF7410GTRPBF

MOSFET P-CH 12V 16A 8-SOIC


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF7410GTRPBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 349
  • Description: MOSFET P-CH 12V 16A 8-SOIC (Kg)

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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 13 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 16A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8676pF @ 10V
Current - Continuous Drain (Id) @ 25°C 16A Ta
Gate Charge (Qg) (Max) @ Vgs 91nC @ 4.5V
Rise Time 18ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 300 ns
Turn-Off Delay Time 271 ns
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.007Ohm
Drain to Source Breakdown Voltage -12V
Pulsed Drain Current-Max (IDM) 65A
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet