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  • IRF7410TRPBF

IRF7410TRPBF

MOSFET P-CH 12V 16A 8-SOIC


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF7410TRPBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 753
  • Description: MOSFET P-CH 12V 16A 8-SOIC (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
Resistance 7MOhm
Voltage - Rated DC -12V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -16A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Row Spacing 6.3 mm
Number of Channels 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 13 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 16A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8676pF @ 10V
Current - Continuous Drain (Id) @ 25°C 16A Ta
Gate Charge (Qg) (Max) @ Vgs 91nC @ 4.5V
Rise Time 12ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 200 ns
Turn-Off Delay Time 271 ns
Continuous Drain Current (ID) -16A
Threshold Voltage -400mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -12V
Pulsed Drain Current-Max (IDM) 65A
Dual Supply Voltage -12V
Recovery Time 145 ns
Max Junction Temperature (Tj) 150°C
Nominal Vgs -900 mV
Height 1.75mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet