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  • IRF7420TRPBF

IRF7420TRPBF

MOSFET P-CH 12V 11.5A 8-SOIC


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF7420TRPBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 951
  • Description: MOSFET P-CH 12V 11.5A 8-SOIC (Kg)

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Details

Tags

Parameters
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 14MOhm
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Subcategory Other Transistors
Voltage - Rated DC -12V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -11.5A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 8.8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 11.5A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3529pF @ 10V
Current - Continuous Drain (Id) @ 25°C 11.5A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 4.5V
Rise Time 8.8ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 225 ns
Turn-Off Delay Time 291 ns
Continuous Drain Current (ID) 11.5mA
Gate to Source Voltage (Vgs) 8V
Factory Lead Time 12 Weeks
Drain to Source Breakdown Voltage -12V
Pulsed Drain Current-Max (IDM) 46A
Mount Surface Mount
Nominal Vgs -900 mV
Mounting Type Surface Mount
Height 1.4986mm
Length 4.9784mm
Package / Case 8-SOIC (0.154, 3.90mm Width)
Width 3.9878mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Number of Pins 8
Transistor Element Material SILICON
See Relate Datesheet