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IRF7425TR
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 7980pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 15A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 4.5V |
| Rise Time | 20ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±12V |
| Continuous Drain Current (ID) | 15A |
| JEDEC-95 Code | MS-012AA |
| Pulsed Drain Current-Max (IDM) | 60A |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2001 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -20V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -15A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.5W Ta |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8.2m Ω @ 15A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
See Relate Datesheet