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  • IRF7476TRPBF

IRF7476TRPBF

MOSFET N-CH 12V 15A 8-SOIC


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF7476TRPBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 213
  • Description: MOSFET N-CH 12V 15A 8-SOIC (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET®
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 15A, 4.5V
Vgs(th) (Max) @ Id 1.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2550pF @ 6V
Current - Continuous Drain (Id) @ 25°C 15A Ta
Gate Charge (Qg) (Max) @ Vgs 40nC @ 4.5V
Rise Time 29ns
Drive Voltage (Max Rds On,Min Rds On) 2.8V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 8.3 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 15A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 12V
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet